University of Guilan Computational Sciences and Engineering 2783-2503 2 2 2022 09 01 Novel Drain Recessed Oxide SOI-MOSFET For Reduction of Short-Channel-Effects 211 216 6219 10.22124/cse.2023.23783.1045 EN Mohammad Kazem Anvarifard Department of Engineering Sciences, Faculty of Technology and Engineering, East of Guilan, University of Guilan, Rudsar-Vajargah, Iran. Journal Article 2023 01 02 Since the device performance is degraded with the elapsed time, it is essential to develop the novel device for enhancing the reliability. Hence, a modification inside the drain region of the SOI-MOSFET structure has been performed. A region oxide has been recessed in the drain in order to modify the electric field owing to dielectric permittivity change. The simulation results obtained by SILVACO showed the improvement of the short-channel effects in the terms of drain-induced barrier lowering, hot-carrier effects and threshold voltage fluctuation as compared to the conventional structure. https://cse.guilan.ac.ir/article_6219_cc780c717402e841aea6aa4bfe202f53.pdf