University of Guilan Computational Sciences and Engineering 2783-2503 5 1 2025 04 01 A Low Voltage BJT-Based Temperature Sensor with Duty Cycle Modulated Output with FOM Resolution of about 1.4pJ. ◦C2 and Inaccuracy of ±0.11 ◦C (3σ) from −55 ◦C to 130 ◦C 15 24 8985 10.22124/cse.2025.31195.1112 EN Mohtaram Dehban Rahimabad Department of Electrical Engineering, University of Guilan, Rasht, Iran Ali Heidari Department of Electrical Engineering, University of Guilan, Rasht, Iran Journal Article 2025 07 15 This paper presents a low voltage BJT-based smart temperature sensor<strong> </strong>with duty cycle modulated output and inaccuracy of ±0.11 ◦C (3σ) and FOM resolution of about 1.4pJ. ◦C² from −55◦C to 130◦C. This sensor can work with a supply voltage of 1.5V. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (V_PTAT) and a complementary to absolute temperature voltage (V_CTAT), which are then modulated to a duty-cycle output. Adding an integrator before the Schmitt trigger has increased the range of input changes of the Schmitt trigger. As a result, the hysteresis of the Schmitt trigger can be increased and it has better noise immunity. Implemented in a standard 0.18-µm CMOS process, the sensor has an active area of about 0.64mm² and can work with 1.5V from -55◦C to 130◦C with an inaccuracy of ±0.11◦C (3σ). Power consumption is about 45uW. https://cse.guilan.ac.ir/article_8985_7d98370227c1a916400661bd1ca78cb7.pdf