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A comparative Study on Ridge Waveguide Laser Diode with Single GaAs Quantum Well

Document Type : Original Article

Author

Department of Engineering Sciences, Faculty of Technology and Engineering East of Guilan, University of Guilan, Rudsar-Vajargah, Iran

Abstract

A typical ridge waveguide laser diode with single GaAs quantum well is theoretically designed and characterized using simulation software PICS3D. The simulator self-consistently combines 3D simulation of carrier transport, self-heating, and optical wave-guiding. Simulation results show that proposed laser structure operates with single mode state at about 0.834 micron with proper threshold current, output power and active region temperature.

Keywords

References
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[3] Oh, S. H., Kim, K. S., Kwon, O. K., & Oh, K. R. (2008). InGaAsP/InP Buried‐Ridge Waveguide Laser with Improved Lateral Single‐Mode Property. ETRI journal, 30(3), 480-482.
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Computational Sciences and Engineering
Volume 3, Issue 2
September 2023
Pages 213-218
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