Novel Drain Recessed Oxide SOI-MOSFET For Reduction of Short-Channel-Effects

Anvarifard, Mohammad Kazem

doi:10.22124/cse.2023.23783.1045

Document Type : Original Article

Author

Mohammad Kazem Anvarifard

Department of Engineering Sciences, Faculty of Technology and Engineering, East of Guilan, University of Guilan, Rudsar-Vajargah, Iran.

https://doi.org/10.22124/cse.2023.23783.1045

Abstract

Since the device performance is degraded with the elapsed time, it is essential to develop the novel device for enhancing the reliability. Hence, a modification inside the drain region of the SOI-MOSFET structure has been performed. A region oxide has been recessed in the drain in order to modify the electric field owing to dielectric permittivity change. The simulation results obtained by SILVACO showed the improvement of the short-channel effects in the terms of drain-induced barrier lowering, hot-carrier effects and threshold voltage fluctuation as compared to the conventional structure.

Keywords

References

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Computational Sciences and Engineering

Novel Drain Recessed Oxide SOI-MOSFET For Reduction of Short-Channel-Effects

References

References

Volume 2, Issue 2
September 2022
Pages 211-216

Novel Drain Recessed Oxide SOI-MOSFET For Reduction of Short-Channel-Effects

References

References

Volume 2, Issue 2September 2022Pages 211-216

Volume 2, Issue 2
September 2022
Pages 211-216