Document Type : Original Article

Authors

• Mahya Salehi ¹
• Ali Naderi ²

¹ Electrical Engineering Department, Energy Faculty, Kermanshah University of Technology, Kermanshah, Iran.

² Electrical Engineering Department, Engineering Faculty, Imam Khomeini International University

Abstract

Where a transistor is scaled to the nano dimension, it faces the problem of short-channel effects (SCEs), which reduce the gate control over the channel. The operation of carbon nanotube field effect transistors (CNTFETs) is completely sensitive to SCEs. Here, we propose a specific doping profile to manage the SCEs in CNTFETs. It includes graded doping with negative or positive slope for different regions of device. This profile manages the band to band tunneling and boosts the current ratio, subthreshold swing, and voltage gain. Tus, the proposed device is a transistor with improved short channel characteristics. Numerical simulation is used to obtain the results from Poisson and Schrodinger equations.

Keywords

• CNTFETs
• PDP
• Short Channel Effects
• Subthreshold swing